Two-dimensional models of threshold voltage and subthreshold current for symmetrical double-material double-gate strained Si MOSFETs

被引：1
|
作者：
Xin, Yan-hui [1 ,2 ]
Yuan, Sheng [1 ]
Liu, Ming-tang [1 ]
Liu, Hong-xia [2 ]
Yuan, He-cai [3 ]
机构：
[1] North China Univ Water Resources & Elect Power, Dept Informat & Engn, Zhengzhou 450046, Peoples R China
[2] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Peoples R China
[3] North China Univ Water Resources & Elect Power, Dept Math & Informat Sci, Zhengzhou 450046, Peoples R China
来源：
CHINESE PHYSICS B | 2016年 / 25卷 / 03期
基金：
中国国家自然科学基金;
关键词：
double-material double-gate MOSFET; strained Si; threshold voltage; subthreshold current; CMOS;
D O I：
10.1088/1674-1056/25/3/038502
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The two-dimensional models for symmetrical double-material double-gate (DM-DG) strained Si (s-Si) metal-oxide semiconductor field effect transistors (MOSFETs) are presented. The surface potential and the surface electric field expressions have been obtained by solving Poisson's equation. The models of threshold voltage and subthreshold current are obtained based on the surface potential expression. The surface potential and the surface electric field are compared with those of single-material double-gate (SM-DG) MOSFETs. The effects of different device parameters on the threshold voltage and the subthreshold current are demonstrated. The analytical models give deep insight into the device parameters design. The analytical results obtained from the proposed models show good matching with the simulation results using DESSIS.
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收藏
页数：5
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