The Characteristics of the Gallium-doped Zinc Oxide Films Using Radio Frequency Magnetron Sputtering

被引：0
|
作者：
Wu, Chia-Ching [1 ]
Yang, Chih-Chin [2 ]
Wang, Jun Zhi [2 ]
Chen, Chia-Hon [2 ]
机构：
[1] Natl Taitung Univ, Dept Appl Sci, Taitung, Taiwan
[2] Natl Kaohsiung Univ Sci & Technol, Dept Microelect Engn, Kaohsiung, Taiwan
来源：
2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE) | 2018年
关键词：
Thin films; Zinc oxide; Gallium; Hall; UV; THIN-FILM; TRANSPARENT; ZNO; DEPOSITION; SUBSTRATE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Transparent conductive gallium-doped zinc oxide (GZO) thin films with different deposition power (from 75 to 150 W) were prepared on the Coring glass substrate by using R.F. magnetron sputtering method. The resulting GZO thin films were crystalline, displaying a hexagonal wurtzite-type crystal structure with a preferred grain orientation in the (002) direction. The best FOM was obtained at 125 W.
引用
收藏
页码：428 / 430
页数：3
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