Low thermal conductivity in Si/Ge hetero-twinned superlattices

被引:11
|
作者
Dong, Huicong [1 ]
Wen, Bin [1 ]
Zhang, Yuwen [2 ]
Melnik, Roderick [3 ]
机构
[1] Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China
[2] Univ Missouri Columbia, Dept Mech & Aerosp Engn, Columbia, MO 65211 USA
[3] Wilfrid Laurier Univ, MS2Discovery Interdisciplinary Res Inst, 75 Univ Ave, Waterloo, ON N2L 3C5, Canada
基金
中国国家自然科学基金; 美国国家科学基金会; 加拿大自然科学与工程研究理事会;
关键词
MOLECULAR-DYNAMICS; BOUNDARIES; MECHANISMS; TRANSPORT; SILICON; SIZE;
D O I
10.1039/c7ra03833j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The thermophysical properties of Si/Ge hetero-twinned superlattices (SLs) are investigated by nonequilibrium molecular dynamic simulations. The results indicate that the Si/Ge hetero-twinned SLs show low thermal conductivity, which is similar to that of conventional Si/Ge SLs. Analysis with phonon kinetic theory shows that low thermal conductivity in the Si/Ge hetero-twinned SLs is caused by the combined actions of reduced phonon group velocity and reduced relaxation time. Moreover, despite similar thermal conductivity in Si/Ge hetero-twinned SLs and conventional Si/Ge SLs, the phonon group velocity and relaxation time in the two structures are totally different. Our results demonstrate the potential of a new kind of SLs with strong phonon scattering.
引用
收藏
页码:29959 / 29965
页数:7
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