Low thermal conductivity in Si/Ge hetero-twinned superlattices

被引：11

作者：

Dong, Huicong ^{[1
]}

Wen, Bin ^{[1
]}

Zhang, Yuwen ^{[2
]}

Melnik, Roderick ^{[3
]}

机构：

[1] Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China

[2] Univ Missouri Columbia, Dept Mech & Aerosp Engn, Columbia, MO 65211 USA

[3] Wilfrid Laurier Univ, MS2Discovery Interdisciplinary Res Inst, 75 Univ Ave, Waterloo, ON N2L 3C5, Canada

来源：

RSC ADVANCES | 2017年 / 7卷 / 48期

基金：

中国国家自然科学基金; 美国国家科学基金会; 加拿大自然科学与工程研究理事会;

关键词：

MOLECULAR-DYNAMICS; BOUNDARIES; MECHANISMS; TRANSPORT; SILICON; SIZE;

D O I：

10.1039/c7ra03833j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The thermophysical properties of Si/Ge hetero-twinned superlattices (SLs) are investigated by nonequilibrium molecular dynamic simulations. The results indicate that the Si/Ge hetero-twinned SLs show low thermal conductivity, which is similar to that of conventional Si/Ge SLs. Analysis with phonon kinetic theory shows that low thermal conductivity in the Si/Ge hetero-twinned SLs is caused by the combined actions of reduced phonon group velocity and reduced relaxation time. Moreover, despite similar thermal conductivity in Si/Ge hetero-twinned SLs and conventional Si/Ge SLs, the phonon group velocity and relaxation time in the two structures are totally different. Our results demonstrate the potential of a new kind of SLs with strong phonon scattering.

引用

页码：29959 / 29965

页数：7

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