Novel gain cell with ferroelectric coplanar capacitor for high-density nonvolatile random-access memory

被引：3
|
作者：
Aoki, M [1 ]
Takauchi, H [1 ]
Tamura, H [1 ]
机构：
[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan
来源：
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年
关键词：
D O I：
10.1109/IEDM.1997.650538
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：942 / 944
页数：3
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