Trial for making three dimensional PZT capacitor for high density ferroelectric random access memory

被引：2
|
作者：
Funakubo, Hiroshi
Nagai, Atsushi
Minamidate, Jun
Koo, June Mo
Kim, Suk Pil
Park, Youngsoo
机构：
[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] Samsung Adv Inst Technol, Yongin 449712, Gyeonggi Do, South Korea
来源：
INTEGRATED FERROELECTRICS | 2006年 / 81卷
关键词：
MOCVD; three dimensional (3D) ferroelectfic capacitor; Ru; PZT;
D O I：
10.1080/10584580600660488
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Three dimensional capacitors of Pb(Zr,Ti)O-3 [PZT] together with the Ru electrodes were tried to deposit by metal organic chemical vapor deposition for realizing high density ferroelectric random access memory (FeRAM). Good conformability was obtained for both of CVD-Ru and PZT layers on the trenched substrates by optimizing the deposition conditions. In addition, PZT films deposited on Ru bottom electrode showed the good compositional conformability. Finally we demonstrated the Ru/PZT/Ru three dimensional capacitor. These data accelerate the development of three dimensional PZT capacitors.
引用
收藏
页码：219 / 226
页数：8
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