Manufacturable high-density 8 mbit one transistor-one capacitor embedded ferroelectric random access memory

Enhanced yield and reliability through process improvements, leading to a manufacturable process for a full-bit functional 8 Mbit one transitor-one capacitor (IT-1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leakage 130 nm, 5 lm Cu/fluorosilicate glass (FSG) interconnect complementary metal oxide semiconductor (CMOS) logic process, are described. Higher signal margins are further enabled by the single-bit substitution methodology that replaces bits at the low-end of the original distribution with redundant elements. Retention tests on wafers with signal margins above a threshold value for screen show no bit fails for bakes extending up to 1000 h, suggesting retention lifetimes of more than 10 years at 85 degrees C. Using the qualified process reported in this paper, commercial products are being routinely produced in our fabrication facilities.