Properties of epitaxially grown In2S3:V thin films for intermediate band solar cell application

被引：0
|
作者：
Jawinski, Tanja [1 ]
Lorenz, Michael [1 ]
Scheer, Roland [2 ]
Grundmann, Marius [1 ]
von Wenckstern, Holger [1 ]
机构：
[1] Univ Leipzig, Felix Bloch Inst Festkorperphys, Leipzig, Germany
[2] Martin Luther Univ Halle Wittenberg, Inst Phys, Halle, Germany
来源：
2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2020年
关键词：
indium sulfide; intermediate band photovoltaics; epitaxial growth; pin-heterojunction;
D O I：
10.1109/pvsc45281.2020.9300369
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Indium sulfide hyperdoped with vanadium has been predicted to be a promising material to realize an intermediate band (IB) solar cell. Using co-evaporation of the elements we grew In2S3:V on (111)-oriented p-Si substrates. As transparent top electrode n-ZnO:Al is used to realize heterostructure pin-solar cells. Investigations of structural properties reveal epitaxial growth independent of the vanadium doping content. We further characterize pin-heterostructure solar cells by current-voltage characteristics in the dark and under illumination. We do not observe an increase of short circuit current density for V-doped samples, which indicates that the IB is fully occupied.
引用
收藏
页码：2663 / 2666
页数：4
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