Impact of the annealing time on physical properties of sprayed In2S3 thin films

被引:4
|
作者
Bouguila, N. [1 ]
Kraini, M. [1 ]
Timoumi, A. [2 ,3 ]
Koaib, J. [1 ]
Halidou, I. [4 ]
Vazquez-Vazquez, C. [5 ]
机构
[1] Univ Gabes, Fac Sci Gabes, Lab Phys Mat & Nanomat Appl Environm, Cite Erriadh Manara Zrig 6072, Gabes, Tunisia
[2] Umm AL Qura Univ, Fac Sci Appl, Dept Phys, Mecca 21955, Saudi Arabia
[3] Natl Engn Sch Tunis, Photovolta & Semicond Mat Lab, POB 37, Tunis 1002, Tunisia
[4] Univ Abdou Moumouni, Fac Sci & Tech, Dept Phys, BP 10662, Niamey, Niger
[5] Univ Santiago de Compostela, Lab Magnetism & Nanotechnol, Inst Technol Res, Santiago De Compostela 15782, Spain
关键词
INDIUM SULFIDE; OPTICAL-PROPERTIES; SUBSTRATE-TEMPERATURE; ELECTRICAL-PROPERTIES; THERMAL-OXIDATION; IN2O3; FILMS; BETA-IN2S3; BEHAVIOR; RAMAN;
D O I
10.1007/s10854-019-00920-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Indium sulfide thin films were deposited on preheated soda-lime glass substrates using spray technique over experiment optimum conditions (T-s=340 degrees C, S/In=2). The effect of annealing time on structural, morphological, optical and electrical properties of the films was investigated. X-ray diffraction spectra show that In2S3 films are polycrystalline with a cubic phase and preferentially oriented towards (400) for different annealing times. It is found that the film grain size increases from 39 to 49nm when increasing the annealing time from 1 to 5h. Both field emission scanning electron microscopy and atomic force microscopy images show that the surface morphology is strongly dependent upon the annealing time. Electron dispersive X-ray spectroscopy reveals that the film composition is not affected by the annealing. Raman spectroscopy analysis shows the predominance of active modes of -ln(2)S(3) films with annealing time. Optical band gap is found to vary in the range 2.38-2.63eV for direct transitions. At room temperature, Hall effect measurements show that the mobility (mu) and the carrier concentration (n(v)) vary in the ranges 1.65-29.3cm(2)V(-1)s(-1) and 1.16x10(17)-2.82x10(17)cm(-3), respectively. Also, the electrical resistivity of the films is reduced from 14.47 to 1.65cm with increasing annealing time. The results are in good agreement with available literature and showed its future use in many optoelectronics devices.
引用
收藏
页码:6178 / 6186
页数:9
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