Exchange bias in a ferromagnetic semiconductor induced by a ferromagnetic metal: Fe/(Ga,Mn)As bilayer films studied by XMCD measurements and SQUID magnetometry

被引：26

作者：

Olejnik, K. ^{[1
,2
]}

Wadley, P. ^{[3
]}

Haigh, J. A. ^{[3
]}

Edmonds, K. W. ^{[3
]}

Campion, R. P. ^{[3
]}

Rushforth, A. W. ^{[3
]}

Gallagher, B. L. ^{[3
]}

Foxon, C. T. ^{[3
]}

Jungwirth, T. ^{[2
,3
]}

Wunderlich, J. ^{[1
,2
]}

Dhesi, S. S. ^{[4
]}

Cavill, S. A. ^{[4
]}

van der Laan, G. ^{[4
]}

Arenholz, E. ^{[5
]}

机构：

[1] Hitachi Cambridge Lab, Cambridge CB3 0HE, England

[2] Acad Sci Czech Republic, Inst Phys, Vvi, Prague 16253 6, Czech Republic

[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[4] Diamond Light Source, Didcot OX11 0DE, Oxon, England

[5] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 10期

关键词：

RAY CIRCULAR-DICHROISM; ABSORPTION-SPECTRA;

D O I：

10.1103/PhysRevB.81.104402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange-coupled (Ga,Mn)As interface layer in addition to the biased bulk of the (Ga,Mn)As film. The interface layer remains polarized at room temperature.

引用

页数：5

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