Exchange bias in a ferromagnetic semiconductor induced by a ferromagnetic metal: Fe/(Ga,Mn)As bilayer films studied by XMCD measurements and SQUID magnetometry

被引：26

作者：

Olejnik, K. ^{[1
,2
]}

Wadley, P. ^{[3
]}

Haigh, J. A. ^{[3
]}

Edmonds, K. W. ^{[3
]}

Campion, R. P. ^{[3
]}

Rushforth, A. W. ^{[3
]}

Gallagher, B. L. ^{[3
]}

Foxon, C. T. ^{[3
]}

Jungwirth, T. ^{[2
,3
]}

Wunderlich, J. ^{[1
,2
]}

Dhesi, S. S. ^{[4
]}

Cavill, S. A. ^{[4
]}

van der Laan, G. ^{[4
]}

Arenholz, E. ^{[5
]}

机构：

[1] Hitachi Cambridge Lab, Cambridge CB3 0HE, England

[2] Acad Sci Czech Republic, Inst Phys, Vvi, Prague 16253 6, Czech Republic

[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[4] Diamond Light Source, Didcot OX11 0DE, Oxon, England

[5] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 10期

关键词：

RAY CIRCULAR-DICHROISM; ABSORPTION-SPECTRA;

D O I：

10.1103/PhysRevB.81.104402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange-coupled (Ga,Mn)As interface layer in addition to the biased bulk of the (Ga,Mn)As film. The interface layer remains polarized at room temperature.

引用

页数：5

共 50 条

[1] Interlayer exchange coupling in (Ga, Mn)As ferromagnetic semiconductor multilayer systems
Lee, Sanghoon
Chung, Sunjae
Lee, Hakjoon
Liu, Xinyu
Dobrowolska, M.
Furdyna, J. K.
JOURNAL OF SEMICONDUCTORS, 2019, 40 (08)
[2] Interlayer exchange coupling in (Ga,Mn) As ferromagnetic semiconductor multilayer systems
Sanghoon Lee
Sunjae Chung
Hakjoon Lee
Xinyu Liu
M.Dobrowolska
J.K.Furdyna
Journal of Semiconductors, 2019, 40 (08) : 35 - 42
[3] Study of Exchange Bias in All Ferromagnetic Fe/Co Soft/Hard Bilayer
Singh, Harkirat
Gupta, Ratnesh
Chakraborty, Tanmoy
Gupta, Ajay
Mitra, Chiranjib
IEEE TRANSACTIONS ON MAGNETICS, 2014, 50 (09)
[4] Light-Induced Precession of Magnetization in Ferromagnetic Semiconductor (Ga,Mn)As
Tesarova, N.
Nemec, P.
Rozkotova, E.
Trojanek, F.
Maly, P.
ACTA PHYSICA POLONICA A, 2010, 118 (05) : 1065 - 1066
[5] Field cooling-induced magnetic anisotropy in exchange biased CoO/Fe bilayer studied by ferromagnetic resonance
Akdogan, Numan
Kazan, Sinan
Aktas, Bekir
Ozdemir, Mustafa
Inam, Hasan
Obaida, Mohamed
Dudek, Joerg
Westerholt, Kurt
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2011, 323 (3-4) : 346 - 350
[6] Exchange bias induced by O ion implantation in ferromagnetic thin films
Demeter, J.
Menendez, E.
Schrauwen, A.
Teichert, A.
Steitz, R.
Vandezande, S.
Wildes, A. R.
Vandervorst, W.
Temst, K.
Vantomme, A.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (40)
[7] Hole density of ferromagnetic semiconductor (Ga, Mn)As studied via pulsed high magnetic field
Cong, K. K.
Ji, Y.
Xia, Z. C.
Wang, S. L.
Wu, Y. Y.
Chen, L.
Zhao, J. H.
26TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT26), PTS 1-5, 2012, 400
[8] Ultrafast optical observation of spin-pumping induced dynamic exchange coupling in ferromagnetic semiconductor/metal bilayer
Liu, X.
Liu, P.
Yuan, H. C.
Shi, J. Y.
Wang, H. L.
Nie, S. H.
Jin, F.
Zheng, Z.
Yu, X. Z.
Zhao, J. H.
Zhao, H. B.
Lupke, G.
SCIENTIFIC REPORTS, 2022, 12 (01)
[9] Ultrafast optical observation of spin-pumping induced dynamic exchange coupling in ferromagnetic semiconductor/metal bilayer
X. Liu
P. Liu
H. C. Yuan
J. Y. Shi
H. L. Wang
S. H. Nie
F. Jin
Z. Zheng
X. Z. Yu
J. H. Zhao
H. B. Zhao
G. Lüpke
Scientific Reports, 12
[10] Theory of magnetization precession induced by a picosecond strain pulse in ferromagnetic semiconductor (Ga,Mn)As
Linnik, T. L.
Scherbakov, A. V.
Yakovlev, D. R.
Liu, X.
Furdyna, J. K.
Bayer, M.
PHYSICAL REVIEW B, 2011, 84 (21)

← 1 2 3 4 5 →