Difference in nature of photoinduced defects and structural instability between surroundings of Si-H and Si-H2 bonds in a-Si:H

被引：0

作者：

Oheda, Hidetoshi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

Physics of Semiconductors, Pts A and B | 2007年 / 893卷

关键词：

amorphous silicon; structural instability; infrared absorption;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The difference in structural instability between Surroundings of the Si-H and Si-H-2 bonds is studied by observing modulated IR absorption. The result is discussed in connection with the difference in nature of defects depending on their creation temperature.

引用

页码：129 / 130

页数：2

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