Difference in nature of photoinduced defects and structural instability between surroundings of Si-H and Si-H2 bonds in a-Si:H

被引：0
|
作者：
Oheda, Hidetoshi [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
来源：
Physics of Semiconductors, Pts A and B | 2007年 / 893卷
关键词：
amorphous silicon; structural instability; infrared absorption;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The difference in structural instability between Surroundings of the Si-H and Si-H-2 bonds is studied by observing modulated IR absorption. The result is discussed in connection with the difference in nature of defects depending on their creation temperature.
引用
收藏
页码：129 / 130
页数：2
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