Heteroepitaxial growth of In2O3 on YSZ (100) single crystal surface

被引：0
|
作者：
Orita, M [1 ]
Ohta, H [1 ]
Tanji, H [1 ]
Hosono, H [1 ]
Kawazoe, H [1 ]
机构：
[1] HOYA Co, Adv Technol Lab, Akishima, Tokyo 1968510, Japan
来源：
FLAT-PANEL DISPLAYS AND SENSORS: PRINCIPLES, MATERIALS AND PROCESSES | 2000年 / 558卷
关键词：
D O I：
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中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In2O3 films were deposited on YSZ (001) single crystal surface at 800 degrees C at an oxygen pressure of 14 Pa by pulsed laser deposition (PLD) method. A heteroepitaxial relationship between the film and the substrate was seen in TEM photographs and X-ray diffraction measurements. The omega locking curve full width of half maximum (FWHM) of the In2O3 (004) x-ray diffraction was 0.06 degrees. Film conductivities were similar to 10 S/cm or less, while carriers on the order of 10(18)/cm(3) were generated.
引用
收藏
页码：399 / 402
页数：4
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