Nucleation and evolution of zinc phthalocyanine thin films on the deactivated Si(111)-B √3 x √3 R30° surface

被引：11
|
作者：
Wagner, Sean R. [1 ]
Zhang, Pengpeng [1 ]
机构：
[1] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA
来源：
SURFACE SCIENCE | 2014年 / 630卷
关键词：
Scanning tunneling microscopy; Phthalocyanine; Moire pattern; Ehrlich-Schwoebel barrier; Grain boundary; Self-assembly; HYDROGEN-TERMINATED SI(111); STEP-EDGE BARRIERS; COPPER PHTHALOCYANINE; GROWTH; POLYCRYSTALLINE; ORIENTATION; MORPHOLOGY; ISLANDS; PTCDA;
D O I：
10.1016/j.susc.2014.06.025
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report the growth evolution of thermally evaporated zinc phthalocyanine (ZnPc) on the deactivated Si(111) surface using scanning tunneling microscopy (STM). We find that the Ehrlich-Schwoebel barrier (ESB) associated with the ZnPc step edges is negligible, while the formation of molecular domain boundaries provides an activation barrier and additional nucleation sites which increases the film roughness and interrupts the anisotropic step-flow growth. By increasing the substrate temperature, the grain boundary density is significantly reduced, resulting in a well-controlled surface morphology. This study provides insight into the influence of the ESB and the grain boundary crossing barrier on the growth dynamics of organic thin films. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：22 / 27
页数：6
相关论文
共 50 条
  • [21] Structure determination of the (√3 x √3) R30° boron phase on the Si(111) surface using photoelectron diffraction
    Baumgärtel, P
    Paggel, JJ
    Hasselblatt, M
    Horn, K
    Fernandez, V
    Schaff, O
    Weaver, JH
    Bradshaw, AM
    Woodruff, DP
    Rotenberg, E
    Denlinger, J
    [J]. PHYSICAL REVIEW B, 1999, 59 (20): : 13014 - 13019
  • [22] Electronic structure of SixSn(1-x)/Si(111)-(√3 X √3)R30° phases
    Lobo, J
    Tejeda, A
    Mugarza, A
    Michel, EG
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (04): : 1298 - 1301
  • [23] The structural analysis of Cu(111)-Te (√3 x √3)R30° and (2√3 x 2√3)R30° surface phases by quantitative LEED and DFT
    Lahti, M.
    Chaudhuri, A.
    Pussi, K.
    Hesp, D.
    McLeod, I. M.
    Dhanak, V. R.
    King, M. O.
    Kadodwala, M.
    MacLaren, D. A.
    [J]. SURFACE SCIENCE, 2014, 622 : 35 - 43
  • [24] Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(2√3x2√3) R30° surface
    Wang, L. L.
    Ma, X. C.
    Ji, S. H.
    Fu, Y. S.
    Shen, Q. T.
    Jia, J. F.
    Kelly, K. F.
    Xue, Q. K.
    [J]. PHYSICAL REVIEW B, 2008, 77 (20)
  • [25] √3x√3 R30°→3x3 distortion on the C/Si(111) surface -: art. no. 241307
    Profeta, G
    Ottaviano, L
    Continenza, A
    [J]. PHYSICAL REVIEW B, 2004, 69 (24): : 241307 - 1
  • [26] LEED structure determination of the Ni(111)(√3 x √3)R30°-Sn surface
    Soares, EA
    Bittencourt, C
    Lopes, EL
    de Carvalho, VE
    Woodruff, DP
    [J]. SURFACE SCIENCE, 2004, 550 (1-3) : 127 - 132
  • [27] Scanning tunneling spectroscopy investigation of the (√3 x √3)R30° Sn/Si(111) α and γ surfaces
    Ressel, B
    Di Teodoro, C
    Profeta, G
    Ottaviano, L
    Cháb, V
    Prince, KC
    [J]. SURFACE SCIENCE, 2004, 562 (1-3) : 128 - 136
  • [28] Investigation of the (√3 x √3)R30°-Cu2Si/Cu(111) surface alloy using DFT
    Shuttleworth, I. G.
    [J]. APPLIED SURFACE SCIENCE, 2011, 257 (15) : 6792 - 6798
  • [29] Geometry of tellurene adsorbed on the Si(111)-(√3 x √3)R30°-Sb surface from first principles calculations
    Isceri, Stefania
    Dragoni, Daniele
    Campi, Davide
    Cecchi, Stefano
    Bernasconi, Marco
    [J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2022, 24 (31) : 18608 - 18614
  • [30] Study on topographic images of Sn/Si(111)-(√3 x √3)R30° surface by non-contact AFM
    Yi, Insook
    Sugimoto, Yoshiaki
    Nishi, Ryuji
    Morita, Seizo
    [J]. SURFACE SCIENCE, 2006, 600 (17) : 3382 - 3387
12345