Electronic properties of quantum dot systems realized in semiconductor nanowires

被引：29
|
作者：
Salfi, J. [1 ]
Roddaro, S. [2 ,3 ]
Ercolani, D. [2 ,3 ]
Sorba, L. [2 ,3 ]
Savelyev, I. [1 ]
Blumin, M. [1 ]
Ruda, H. E. [1 ]
Beltram, F. [2 ,3 ]
机构：
[1] Univ Toronto, Ctr Adv Nanotechnol, Toronto, ON M5S 3E4, Canada
[2] NEST CNR INFM, Pisa, Italy
[3] Scuola Normale Super Pisa, Pisa, Italy
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2010年 / 25卷 / 02期
基金：
加拿大自然科学与工程研究理事会;
关键词：
HETEROSTRUCTURES; TRANSPORT; DEVICES;
D O I：
10.1088/0268-1242/25/2/024007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Catalyst-assisted growth of semiconductor nanowires has opened up several new and exciting possibilities for low-dimensional semiconductor structures. The authors review progress on the realization of quantum dots in semiconductor nanowires, and their characterization by transport spectroscopy. Emphasis is placed on the wide range electronic properties exhibited due to flexibility of the growth process in terms of nanostructure composition and size. Particular attention is placed on studies of spin in few-electron quantum dots.
引用
收藏
页数：12
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