Heterogeneous Integration Technology for MEMS-LSI Multi-Chip Module

被引：0

作者：

Lee, K-W ^{[1
]}

Kanno, S. ^{[1
]}

Ohara, Y. ^{[1
]}

Kiyoyama, K. ^{[1
]}

Bea, J-C ^{[1
]}

Fukushima, T. ^{[1
]}

Tanaka, T. ^{[2
]}

Koyanagi, M. ^{[1
]}

机构：

[1] Tohoku Univ, Dept Bioengn & Robot, Sendai, Miyagi 9808579, Japan

[2] Tohoku Univ, Grad Sch Biomed Engn, Dept Biomed Engn, Sendai, Miyagi 980, Japan

来源：

2009 IEEE INTERNATIONAL CONFERENCE ON 3D SYSTEMS INTEGRATION | 2009年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We developed novel interconnection technology for heterogeneous integration of MEMS and LSI mufti-chip module, in which MEMS and LSI chips would be horizontally integrated on substrate and vertically stacked each others. The cavity chip composed of deep Cu TSV-beam lead wires was developed for interconnecting MEMS chips with high step height of more than 100um. Fundamental characteristics were successfully obtained from pressure sensing MEMS chip with 360 mu m thickness, which was connected to the substrate by the cavity chip. MEMS and LSI chips were vertically integrated by using the cavity chip without changes of chip design and extra processes. This interconnection technology can give strong solution for heterogeneous integration of MEMS and LSI chips multi-chip module.

引用

页码：6 / +

页数：3

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