Templated Vapor-Liquid-Solid Epitaxy of III-V Semiconductors on Silicon

被引:0
|
作者
Schneble, Olivia D. [1 ,2 ]
Neumann, Anica [1 ,2 ]
Norman, Andrew G. [2 ]
Saenz, Theresa E. [1 ,2 ]
Zimmerman, Jeramy D. [1 ]
Warren, Emily L. [2 ]
机构
[1] Colorado Sch Mines, Golden, CO 80401 USA
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1109/pvsc45281.2020.9300843
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Epitaxial growth on silicon remains the most promising method to reduce the cost of optoelectronic-quality III-V semiconductors. Several approaches exist to epitaxially grow III-V material from the vapor phase, but control of 3-D structures remains difficult with these methods. In this work, we present a novel epitaxial growth technique in which photolithography and wet etching are used to establish the geometry of group-III metal, which is then converted to III-V semiconductor by annealing with exposure group-V precursor. The resulting material has been shown to align to the substrate lattice and is optically active, making it a promising approach for III-V PV technologies.
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页码:547 / 548
页数:2
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