Mechanisms of Electromigration under AC and Pulsed-DC Stress in Cu/Low-k Dual Damascene Interconnects

被引：0

作者：

Lin, M. H. ^{[1
]}

Oates, A. S. ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co Ltd, 168,Pk Ave 2, Hsinchu 30077, Taiwan

来源：

2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2015年

关键词：

AC Elecromigration; pulse DC; Copper; low-k; RELIABILITY; FAILURE; CAP;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We examine electromigration mass transport under pulsed-DC (PDC) and AC conditions by measuring the Cu drift velocity. We observed drift velocities that are constant as a function of duty ratio, confirm that there is no recovery of electromigration damage during current reversal, or off-cycles. Failure time distributions under PDC conditions can be accurately modeled by a void growth mechanism with an effective current density given by the average of the waveform.

引用

页数：6

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