Mechanisms of Electromigration under AC and Pulsed-DC Stress in Cu/Low-k Dual Damascene Interconnects

被引：0
|
作者：
Lin, M. H. [1 ]
Oates, A. S. [1 ]
机构：
[1] Taiwan Semicond Mfg Co Ltd, 168,Pk Ave 2, Hsinchu 30077, Taiwan
来源：
2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2015年
关键词：
AC Elecromigration; pulse DC; Copper; low-k; RELIABILITY; FAILURE; CAP;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We examine electromigration mass transport under pulsed-DC (PDC) and AC conditions by measuring the Cu drift velocity. We observed drift velocities that are constant as a function of duty ratio, confirm that there is no recovery of electromigration damage during current reversal, or off-cycles. Failure time distributions under PDC conditions can be accurately modeled by a void growth mechanism with an effective current density given by the average of the waveform.
引用
收藏
页数：6
相关论文
共 50 条
  • [31] Duty cycle and frequency effects of pulsed-dc currents on electromigration-induced stress in Al interconnects
    Frankovic, R
    Bernstein, GH
    Clement, JJ
    MATERIALS RELIABILITY IN MICROELECTRONICS VI, 1996, 428 : 109 - 114
  • [32] New reliability failure by water absorption into low-k SiOCH dielectric on Cu dual-damascene interconnects
    Tsumura, K
    Miyajima, H
    Ito, S
    Usui, T
    Shibata, H
    ADVANCED METALLIZATION CONFERENCE 2005 (AMC 2005), 2006, : 701 - 706
  • [33] Formation of Highly Reliable Cu/Low-k Interconnects by Using CVD Co Barrier in Dual Damascene Structures
    Jung, Hye Kyung
    Lee, Hyun-Bae
    Tsukasa, Matsuda
    Jung, Eunji
    Yun, Jong-Ho
    Lee, Jong Myeong
    Choi, Gil-Heyun
    Choi, Siyoung
    Chung, Chilhee
    2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2011,
  • [34] Cu Dual- Damascene Interconnects with Direct Chemical Mechanical Polishing Process on Porous Low-k Film
    Izumitani, Junko
    Kodama, Daisuke
    Kido, Shigenori
    Chibahara, Hiroyuki
    Oka, Yoshihiro
    Goto, Kinya
    Suzumura, Naohito
    Fujisawa, Masahiko
    Miyatake, Hiroshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (05) : 05FC021 - 05FC024
  • [35] Effect of grain growth stress and stress gradient on stress-induced voiding in damascene Cu/low-k interconnects for ULSI
    Paik, JM
    Park, IM
    Joo, YC
    THIN SOLID FILMS, 2006, 504 (1-2) : 284 - 287
  • [36] Strategy to Characterize Electromigration Short Length Effects in Cu/low-k Interconnects
    Zhang, Z.
    Kraatz, M.
    Hauschildt, M.
    Choi, S.
    Clausner, A.
    Zschech, E.
    Gall, M.
    2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2021,
  • [37] Electromigration reliability of Cu/spin-on porous ultra low-k interconnects
    Mosig, K
    Blaschke, V
    ADVANCED METALLIZATION CONFERENCE 2001 (AMC 2001), 2001, : 427 - 432
  • [38] STUDY OF UPSTREAM ELECTROMIGRATION BIMODALITY AND ITS IMPROVEMENT IN CU LOW-K INTERCONNECTS
    Liu, W.
    Lim, Y. K.
    Zhang, F.
    Liu, H.
    Zhao, Y. H.
    Du, A. Y.
    Zhang, B. C.
    Tan, J. B.
    Sohn, D. K.
    Hsia, L. C.
    2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2010, : 906 - 910
  • [39] Effect of barrier process on electromigration reliability of Cu/porous low-k interconnects
    Pyun, Jung Woo
    Baek, Won-Chong
    Im, Jay
    Ho, Paul S.
    Smith, Larry
    Neuman, Kyle
    Pfeifer, Klaus
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)
  • [40] Strategies to Ensure Electromigration Reliability of Cu/Low-k Interconnects at 10 nm
    Oates, Anthony S.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (01) : N3168 - N3176
12345