Mechanisms of Electromigration under AC and Pulsed-DC Stress in Cu/Low-k Dual Damascene Interconnects

被引：0
|
作者：
Lin, M. H. [1 ]
Oates, A. S. [1 ]
机构：
[1] Taiwan Semicond Mfg Co Ltd, 168,Pk Ave 2, Hsinchu 30077, Taiwan
来源：
2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2015年
关键词：
AC Elecromigration; pulse DC; Copper; low-k; RELIABILITY; FAILURE; CAP;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We examine electromigration mass transport under pulsed-DC (PDC) and AC conditions by measuring the Cu drift velocity. We observed drift velocities that are constant as a function of duty ratio, confirm that there is no recovery of electromigration damage during current reversal, or off-cycles. Failure time distributions under PDC conditions can be accurately modeled by a void growth mechanism with an effective current density given by the average of the waveform.
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页数：6
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