High Breakdown Voltage MESFETs Integrated with SOI CMOS Technologies

被引：1
|
作者：
Thornton, Trevor [1 ]
机构：
[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
来源：
2019 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2019年
关键词：
silicon-on-insulator; MESFETs; CMOS; power devices; power amplifiers; K-band; TOM3 and Angelov models;
D O I：
10.1109/S3S46989.2019.9320668
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The high-voltage, high-current, and RF applications of SOI MESFETs are reviewed. Seamless integration of the MESFETs with highly scaled CMOS technologies enables a variety of RF and mixed-signal applications that can be simulated using industry standard device models.
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