Avalanche breakdown in SOI MESFETs

被引：7

作者：

Lepkowski, William ^{[1
]}

Wilk, Seth J. ^{[1
]}

Parsi, Anuradha ^{[2
]}

Saraniti, Marco ^{[2
]}

Ferry, David ^{[2
]}

Thornton, Trevor J. ^{[2
]}

机构：

[1] SJT Micropower Inc, Fountain Hills, AZ 85268 USA

[2] Arizona State Univ, Sch Elect Comp & Energy Engn, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

来源：

SOLID-STATE ELECTRONICS | 2014年 / 91卷

关键词：

Silicon-on-insulator; Partially-depleted; Avalanche multiplication; MESFETs; Schottky junction; IONIZATION; SILICON; SIGNAL;

D O I：

10.1016/j.sse.2013.10.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-semiconductor field-effect-transistors (MESFETs) have been manufactured using a highly scaled 45 nm silicon-on-insulator (SOI) CMOS technology. The MESFETs display a reversible, soft breakdown at voltages greatly exceeding that of the standard CMOS devices. The breakdown voltage increases with the length of the access region between the MESFET channel and drain contact. The measured breakdown voltage is well described by a simple model based on avalanche multiplication. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：78 / 80

页数：3

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