3D quantum numerical simulation of single-event transients in multiple-gate nanowire MOSFETs

被引：30
|
作者：
Munteanu, D. [1 ]
Autran, J. L.
Ferlet-Cavrois, V.
Paillet, P.
Baggio, J.
Castellani, K.
机构：
[1] CNRS, L2MP, UMR 6137, F-13384 Marseille 13, France
[2] IUF, Paris, France
[3] CEA, DAM DIF, F-91680 Bruyeres Le Chatel, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 04期
关键词：
Double-Gate (DG); Gate-All-Around (GAA); Multiple-Gate nanowire MOSFET; Omega-Gate (Q-Gate); quantum-mechanical effects; 3D quantum simulation; Triple-Gate (Tri-gate);
D O I：
10.1109/TNS.2007.892284
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impact of quantum confinement effects on the transient response of 32 nm Multiple-Gate nanowire MOSFETs to heavy ion irradiation is investigated using 3D quantum numerical simulation. The drain current transient induced by an ion strike and the bipolar amplification of Double-Gate, Triple-Gate, Omega-Gate and Gate-All-Around architectures is simulated for the 2007, 2009 and 2011 ITRS Low Power technology nodes. The consequences of quantum-mechanical confinement on single-event transient immunity when devices are scaled down to 20 nm gate length and 5 mn thick silicon channel are then analyzed.
引用
收藏
页码：994 / 1001
页数：8
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