3D quantum numerical simulation of single-event transients in multiple-gate nanowire MOSFETs

被引：30
|
作者：
Munteanu, D. [1 ]
Autran, J. L.
Ferlet-Cavrois, V.
Paillet, P.
Baggio, J.
Castellani, K.
机构：
[1] CNRS, L2MP, UMR 6137, F-13384 Marseille 13, France
[2] IUF, Paris, France
[3] CEA, DAM DIF, F-91680 Bruyeres Le Chatel, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 04期
关键词：
Double-Gate (DG); Gate-All-Around (GAA); Multiple-Gate nanowire MOSFET; Omega-Gate (Q-Gate); quantum-mechanical effects; 3D quantum simulation; Triple-Gate (Tri-gate);
D O I：
10.1109/TNS.2007.892284
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impact of quantum confinement effects on the transient response of 32 nm Multiple-Gate nanowire MOSFETs to heavy ion irradiation is investigated using 3D quantum numerical simulation. The drain current transient induced by an ion strike and the bipolar amplification of Double-Gate, Triple-Gate, Omega-Gate and Gate-All-Around architectures is simulated for the 2007, 2009 and 2011 ITRS Low Power technology nodes. The consequences of quantum-mechanical confinement on single-event transient immunity when devices are scaled down to 20 nm gate length and 5 mn thick silicon channel are then analyzed.
引用
收藏
页码：994 / 1001
页数：8
相关论文
共 50 条
  • [11] Modeling and simulation of single- and multiple-gate 2-D MESFET's
    Iníguez, B
    Lü, JQ
    Hurt, MJ
    Peatman, WCB
    Shur, MS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (08) : 1742 - 1748
  • [12] Simulation Studies of Single-Event Effects in β-Ga2O3 MOSFETs
    Datta, Animesh
    Singisetti, Uttam
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (01) : 476 - 483
  • [13] 3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs
    Munteanu, D.
    Autran, J. L.
    MICROELECTRONICS RELIABILITY, 2015, 55 (9-10) : 1522 - 1526
  • [14] 3D analytical modelling of subthreshold characteristics in vertical Multiple-gate FinFET transistors
    Ritzenthaler, Romain
    Lime, Francois
    Faynot, Olivier
    Cristoloveanu, Sorin
    Iniguez, Benjamin
    SOLID-STATE ELECTRONICS, 2011, 65-66 : 94 - 102
  • [15] 3D Drift-Diffusion Simulation with Quantum-Corrections of Tri-Gate MOSFETs
    Garcia-Loureiro, A.
    Aldegunde, M.
    Seoane, N.
    Kalna, K.
    Asenov, A.
    PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES, 2009, : 200 - +
  • [16] EXPERIMENTAL AND 2D SIMULATION STUDY OF THE SINGLE-EVENT BURNOUT IN N-CHANNEL POWER MOSFETS
    ROUBAUD, F
    DACHS, C
    PALAU, JM
    GASIOT, J
    TASTET, P
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (06) : 1952 - 1958
  • [17] 3D simulation of triple-gate MOSFETs with different mobility regions
    Conde, J.
    Cerdeira, A.
    Pavanello, M.
    Kilchytska, V.
    Flandre, D.
    MICROELECTRONIC ENGINEERING, 2011, 88 (07) : 1633 - 1636
  • [18] Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs
    Yu, Cheng-hao
    Guo, Hao-min
    Liu, Yan
    Wu, Xiao-dong
    Zhang, Li-long
    Tan, Xin
    Han, Yun-cheng
    Ren, Lei
    MICROELECTRONICS RELIABILITY, 2023, 149
  • [19] Investigation of Single Event Transients on RingFET using 3D TCAD Simulations
    Ramya, M.
    Nagarajan, K. K.
    SILICON, 2023, 15 (02) : 875 - 886
  • [20] Investigation of Single Event Transients on RingFET using 3D TCAD Simulations
    M. Ramya
    K. K. Nagarajan
    Silicon, 2023, 15 : 875 - 886
12345