3D quantum numerical simulation of single-event transients in multiple-gate nanowire MOSFETs

被引：30
|
作者：
Munteanu, D. [1 ]
Autran, J. L.
Ferlet-Cavrois, V.
Paillet, P.
Baggio, J.
Castellani, K.
机构：
[1] CNRS, L2MP, UMR 6137, F-13384 Marseille 13, France
[2] IUF, Paris, France
[3] CEA, DAM DIF, F-91680 Bruyeres Le Chatel, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 04期
关键词：
Double-Gate (DG); Gate-All-Around (GAA); Multiple-Gate nanowire MOSFET; Omega-Gate (Q-Gate); quantum-mechanical effects; 3D quantum simulation; Triple-Gate (Tri-gate);
D O I：
10.1109/TNS.2007.892284
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impact of quantum confinement effects on the transient response of 32 nm Multiple-Gate nanowire MOSFETs to heavy ion irradiation is investigated using 3D quantum numerical simulation. The drain current transient induced by an ion strike and the bipolar amplification of Double-Gate, Triple-Gate, Omega-Gate and Gate-All-Around architectures is simulated for the 2007, 2009 and 2011 ITRS Low Power technology nodes. The consequences of quantum-mechanical confinement on single-event transient immunity when devices are scaled down to 20 nm gate length and 5 mn thick silicon channel are then analyzed.
引用
收藏
页码：994 / 1001
页数：8
相关论文
共 50 条
  • [1] 3D quantum modeling and simulation of multiple-gate nanowire MOSFETs
    Bescond, M
    Nehari, K
    Autran, JL
    Cavassilas, N
    Munteanu, D
    Lannoo, M
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 617 - 620
  • [2] Quasi-3-D velocity saturation model for multiple-gate MOSFETs
    Han, Jin-Woo
    Lee, Choong-Ho
    Park, Donggun
    Choi, Yang-Kyu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (05) : 1165 - 1170
  • [3] An Analytical Model of Single-Event Transients in Double-Gate MOSFET for Circuit Simulation
    Aneesh, Y. M.
    Sriram, S. R.
    Pasupathy, K. R.
    Bindu, B.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (09) : 3710 - 3717
  • [4] A Unified Quasi-3D Subthreshold Behavior Model for Multiple-Gate MOSFETs
    Liou, Juin J.
    Gao, Hong-Wun
    Wang, Yeong-Her
    Chiang, Te-Kuang
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 17 (04) : 763 - 771
  • [5] Single-Event Effects in Power MOSFETs: Physical Mechanism and Hardening through 3D Simulations
    Zhu Ming
    Wang Tong
    Gu HanTian
    Qu RuoYuan
    Zhu HengJing
    Zhang Wei
    Tang Min
    2018 IEEE 2ND INTERNATIONAL CONFERENCE ON CIRCUITS, SYSTEM AND SIMULATION (ICCSS 2018), 2018, : 1 - 4
  • [6] 3D numerical simulations of single-event transient effects in SOI FinFETs
    Zhenyu Wu
    Benneng Zhu
    Tengyue Yi
    Chao Li
    Yi Liu
    Yintang Yang
    Journal of Computational Electronics, 2018, 17 : 1608 - 1614
  • [7] 3D numerical simulations of single-event transient effects in SOI FinFETs
    Wu, Zhenyu
    Zhu, Benneng
    Yi, Tengyue
    Li, Chao
    Liu, Yi
    Yang, Yintang
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2018, 17 (04) : 1608 - 1614
  • [8] 3D quantum mechanical simulation of square nanowire MOSFETs by using NEGF method
    Dastjerdy, Esmaeil
    Ghayour, Rahim
    Sarvari, Hojjat
    CENTRAL EUROPEAN JOURNAL OF PHYSICS, 2011, 9 (02): : 472 - 481
  • [9] Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation
    Munteanu D.
    Autran J.L.
    Moindjie S.
    Autran, J.L. (jean-luc.autran@univ-amu.fr), 1600, Elsevier Ltd (76-77): : 719 - 724
  • [10] Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation
    Munteanu, D.
    Autran, J. L.
    Moindjie, S.
    MICROELECTRONICS RELIABILITY, 2017, 76 : 719 - 724
12345