Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

被引：2

作者：

Slobodskyy, T ^{[1
]}

Rüster, C ^{[1
]}

Fiederling, R ^{[1
]}

Keller, D ^{[1
]}

Gould, C ^{[1
]}

Ossau, W ^{[1
]}

Schmidt, G ^{[1
]}

Molenkamp, LW ^{[1
]}

机构：

[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 25期

关键词：

D O I：

10.1063/1.1841456

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films. (C) 2004 American Institute of Physics.

引用

页码：6215 / 6217

页数：3

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