Improved reliability of Ge MOS capacitor with HfTiON high-k dielelctric by using Ge surface pretreatment in wet NO

被引：17

作者：

Li, C. X. ^{[1
]}

Lai, P. T. ^{[1
]}

Xu, J. P. ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 9-10期

基金：

中国国家自然科学基金;

关键词：

high-k dielectric; Ge MOS; pretreatment; capacitance-voltage characterization;

D O I：

10.1016/j.mee.2007.04.049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality Ge MOS capacitors with HMON as high-k gate dielectric are fabricated by using Ge surface pretreatment in wet NH3, N2O, NO and N-2 ambients. The wet-NO pretreatment is found to be the best for improving the reliability properties of the Ge MOS capacitor, with smallest increases of interface-state density, leakage current and flat-band voltage after electrical stress.

引用

页码：2340 / 2343

页数：4

共 50 条

[31] Effects of annealing gas species on the electrical properties and reliability of Ge MOS capacitors with high-k Y2O3 gate dielectric
Li, C. X.
Xu, H. X.
Xu, J. P.
Lai, P. T.
2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009), 2009, : 243 - +
[32] Rare earth oxides as high-k dielectrics for Ge based MOS devices:: An electrical study of Pt/Gd2O3/Ge capacitors
Evangelou, E. K.
Mavrou, G.
DimoulaS, A.
Konofaos, N.
SOLID-STATE ELECTRONICS, 2007, 51 (01) : 164 - 169
[33] Improved n-channel Ge gate stack performance using HfAlO high-k dielectric for various Al concentrations
Kothari, Shraddha
Joishi, Chandan
Ghosh, Sayantan
Biswas, Dipankar
Vaidya, Dhirendra
Ganguly, Swaroop
Lodha, Saurabh
APPLIED PHYSICS EXPRESS, 2016, 9 (07)
[34] Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures
Zhang, Liangliang
Li, Huanglong
Guo, Yuzheng
Tang, Kechao
Woicik, Joseph
Robertson, John
McIntyre, Paul C.
ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (37) : 20499 - 20506
[35] Reliability of ZrO2/GeOxNy stacked high-k dielectrics on Ge under dynamic and pulsed voltage stress
Mahata, C.
Bera, M. K.
Bose, P. K.
Chakraborty, A.
SenGupta, A.
Maiti, C. K.
IPFA 2008: PROCEEDINGS OF THE 15TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2008, : 204 - +
[36] Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
Delabie, Annelies
Bellenger, Florence
Houssa, Michel
Conard, Thierry
Van Elshocht, Sven
Caymax, Matty
Heyns, Marc
Meuris, Marc
APPLIED PHYSICS LETTERS, 2007, 91 (08)
[37] Enhanced Ge n-channel gate stack performance using HfAlO high-k dielectric
Kothari, Shraddha
Joishi, Chandan
Biswas, Dipankar
Vaidya, Dhirendra
Ganguly, Swaroop
Lodha, Saurabh
2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2015, : 285 - U282
[38] High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment
Liu Chao-Wen
Xu Jing-Ping
Liu Lu
Lu Han-Han
CHINESE PHYSICS B, 2015, 24 (12)
[39] High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment
刘超文
徐静平
刘璐
卢汉汉
Chinese Physics B, 2015, 24 (12) : 500 - 504
[40] Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
Wang, Chin-, I
Chang, Teng-Jan
Yin, Yu-Tung
Jiang, Yu-Sen
Shyue, Jing-Jong
Chen, Miin-Jang
ACS APPLIED ELECTRONIC MATERIALS, 2020, 2 (04) : 891 - 897

← 1 2 3 4 5 →