Improved reliability of Ge MOS capacitor with HfTiON high-k dielelctric by using Ge surface pretreatment in wet NO

被引：17
|
作者：
Li, C. X. [1 ]
Lai, P. T. [1 ]
Xu, J. P. [1 ]
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源：
MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 9-10期
基金：
中国国家自然科学基金;
关键词：
high-k dielectric; Ge MOS; pretreatment; capacitance-voltage characterization;
D O I：
10.1016/j.mee.2007.04.049
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-quality Ge MOS capacitors with HMON as high-k gate dielectric are fabricated by using Ge surface pretreatment in wet NH3, N2O, NO and N-2 ambients. The wet-NO pretreatment is found to be the best for improving the reliability properties of the Ge MOS capacitor, with smallest increases of interface-state density, leakage current and flat-band voltage after electrical stress.
引用
收藏
页码：2340 / 2343
页数：4
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