Double photoionization into double core-hole states in Xe

被引：34
|
作者：
Hikosaka, Y. [1 ]
Lablanquie, P.
Penent, F.
Kaneyasu, T.
Shigemasa, E.
Eland, J. H. D.
Aoto, T.
Ito, K.
机构：
[1] UVSOR Facil, Inst Mol Sci, Okazaki, Aichi 4448585, Japan
[2] Univ Paris 06, LCP MR, F-75231 Paris, France
[3] CNRS, UMR 7614, F-75231 Paris, France
[4] Univ Oxford, Phys & Theoret Chem Lab, Oxford OX1 3QZ, England
[5] Inst Mat Struct Sci, Photon Factory, Tsukuba, Ibaraki 3050801, Japan
来源：
PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 18期
关键词：
D O I：
10.1103/PhysRevLett.98.183002
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Double photoionization (DPI) leading to double core-hole states of Xe2+ 4d(-2) has been studied using a magnetic bottle time-of-flight spectrometer. The assignments of the Xe2+ 4d(-2) states are confirmed by the Auger lines extracted from fourfold coincidences including two photoelectrons and two Auger electrons. It is estimated that the core-core DPI into Xe2+ 4d(-2) at a photon energy of 301.6 eV has a favored cross section of about 0.3 MB. The intense core-core DPI is due to mixing of the 4d(-2) continuum with the 4p single photoionization, which is manifested in the relative intensities of the Xe2+ 4d(-2) components.
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页数：4
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