Double photoionization into double core-hole states in Xe

被引：34

作者：

Hikosaka, Y. ^{[1
]}

Lablanquie, P.

Penent, F.

Kaneyasu, T.

Shigemasa, E.

Eland, J. H. D.

Aoto, T.

Ito, K.

机构：

[1] UVSOR Facil, Inst Mol Sci, Okazaki, Aichi 4448585, Japan

[2] Univ Paris 06, LCP MR, F-75231 Paris, France

[3] CNRS, UMR 7614, F-75231 Paris, France

[4] Univ Oxford, Phys & Theoret Chem Lab, Oxford OX1 3QZ, England

[5] Inst Mat Struct Sci, Photon Factory, Tsukuba, Ibaraki 3050801, Japan

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.98.183002

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Double photoionization (DPI) leading to double core-hole states of Xe2+ 4d(-2) has been studied using a magnetic bottle time-of-flight spectrometer. The assignments of the Xe2+ 4d(-2) states are confirmed by the Auger lines extracted from fourfold coincidences including two photoelectrons and two Auger electrons. It is estimated that the core-core DPI into Xe2+ 4d(-2) at a photon energy of 301.6 eV has a favored cross section of about 0.3 MB. The intense core-core DPI is due to mixing of the 4d(-2) continuum with the 4p single photoionization, which is manifested in the relative intensities of the Xe2+ 4d(-2) components.

引用

页数：4

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