Integrated Ferroelectric BaTiO3/Si Plasmonic Modulator for 100 Gbit/s and Beyond

被引：0
|
作者：
Messner, Andreas [2 ]
Eltes, Felix [1 ]
Ma, Ping [2 ]
Abel, Stefan [1 ]
Baeuerle, Benedikt [2 ]
Josten, Arne [2 ]
Heni, Wolfgang [2 ]
Caimi, Daniele [1 ]
Fompeyrine, Jean [1 ]
Leuthold, Juerg [2 ]
机构：
[1] IBM Res Zurich, Saumerstr 4, CH-8803 Ruschlikon, Switzerland
[2] Swiss Fed Inst Technol, IEF, CH-8092 Zurich, Switzerland
来源：
2018 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC) | 2018年
基金：
瑞士国家科学基金会;
关键词：
SILICON; SPEED;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present an integrated ferroelectric BaTiO3/Si plasmonic modulator and test its performance at 116 Gbit/s. The modulator has been tested to withstand temperatures up to 250 degrees C.
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页数：3
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