Integrated Ferroelectric BaTiO3/Si Plasmonic Modulator for 100 Gbit/s and Beyond

被引：0

作者：

Messner, Andreas ^{[2
]}

Eltes, Felix ^{[1
]}

Ma, Ping ^{[2
]}

Abel, Stefan ^{[1
]}

Baeuerle, Benedikt ^{[2
]}

Josten, Arne ^{[2
]}

Heni, Wolfgang ^{[2
]}

Caimi, Daniele ^{[1
]}

Fompeyrine, Jean ^{[1
]}

Leuthold, Juerg ^{[2
]}

机构：

[1] IBM Res Zurich, Saumerstr 4, CH-8803 Ruschlikon, Switzerland

[2] Swiss Fed Inst Technol, IEF, CH-8092 Zurich, Switzerland

来源：

2018 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC) | 2018年

基金：

瑞士国家科学基金会;

关键词：

SILICON; SPEED;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an integrated ferroelectric BaTiO3/Si plasmonic modulator and test its performance at 116 Gbit/s. The modulator has been tested to withstand temperatures up to 250 degrees C.

引用

页数：3

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