Integrated Ferroelectric BaTiO3/Si Plasmonic Modulator for 100 Gbit/s and Beyond

被引:0
|
作者
Messner, Andreas [2 ]
Eltes, Felix [1 ]
Ma, Ping [2 ]
Abel, Stefan [1 ]
Baeuerle, Benedikt [2 ]
Josten, Arne [2 ]
Heni, Wolfgang [2 ]
Caimi, Daniele [1 ]
Fompeyrine, Jean [1 ]
Leuthold, Juerg [2 ]
机构
[1] IBM Res Zurich, Saumerstr 4, CH-8803 Ruschlikon, Switzerland
[2] Swiss Fed Inst Technol, IEF, CH-8092 Zurich, Switzerland
基金
瑞士国家科学基金会;
关键词
SILICON; SPEED;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present an integrated ferroelectric BaTiO3/Si plasmonic modulator and test its performance at 116 Gbit/s. The modulator has been tested to withstand temperatures up to 250 degrees C.
引用
收藏
页数:3
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