Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures

被引：15

作者：

Novikov, A. V. ^{[1
]}

Yablonskiy, A. N. ^{[1
]}

Platonov, V. V. ^{[2
]}

Obolenskiy, S. V. ^{[3
]}

Lobanov, D. N. ^{[1
]}

Krasilnik, Z. F. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[2] Sarov Phys Tech Inst, Sarov 607183, Russia

[3] Nizhnii Novgorod State Univ, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2010年 / 44卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

RADIATIVE RECOMBINATION; QUANTUM DOTS; GE/SI; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; HARDNESS;

D O I：

10.1134/S1063782610030103

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This study is concerned with the effect of irradiation on the luminescence properties of low-dimensional Si/Ge heterostructures with different degrees of spatial localization of charge carriers. It is shown that the radiation stability of Si/Ge heterostructures is improved with increasing efficiency of localization of charge carriers in the structures. The spatial localization of charge carriers in the SiGe nanostructures decreases the probability of nonradiative recombination of charge carriers at radiation defects produced in the Si matrix. It is demonstrated that, among the structures explored in the study, the highest radiation stability of luminescence properties is inherent in the multilayered structures containing self-assembled Ge(Si) nanoislands, in which the most efficient spatial localization of charge carriers is attained. In this case, the localization is three- and two-dimensional, correspondingly, for holes in the islands and for electrons in the Si layers that separate neighboring layers containing the islands.

引用

页码：329 / 334

页数：6

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