LUMINESCENCE DECAY IN DISORDERED LOW-DIMENSIONAL SEMICONDUCTORS

被引：121
|
作者：
CHEN, X
HENDERSON, B
ODONNELL, KP
机构：
[1] Department of Physics and Applied Physics, University of Strathclyde, Glasgow
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 21期
关键词：
D O I：
10.1063/1.106891
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The luminescence decay of excitons in disordered low-dimensional semiconductors with quantum confinement is shown experimentally to be characterized by a nonexponential profile and an absence of spectral diffusion. We are able to describe this luminescence as a hopping-assisted recombination using the correlation function approach to nondispersive transport developed by H. Scher, M. F. Shlesinger, and J. T. Bendler [Phys. Today 41, 26 (1991)]. We suggest a simple derivation of analytical functions which accurately describe the anomalous luminescence decays of disordered II-VI superlattices and of porous silicon, and show that this model includes exponential and Kohlrausch [Pogg. Ann. Phys. 119, 352 (1863)] (stretched-exponential) relaxations as special cases.
引用
收藏
页码：2672 / 2674
页数：3
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