Subthreshold current in silicon carbide buried-gate junction field-effect transistor

被引：0
|
作者：
Ivanov, PA
机构：
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
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暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A theory of subthreshold conduction in buried-gate junction field-effect transistor has been developed which is based on the assumption that the subthreshold current is governed by carrier diffusion in the channel. An analytical expression has been obtained for the dependence of the drain current in subthreshold operation upon gate and drain voltages. The expression is found to correlate well with experimental results taken on n-channel 6H-SiC JFET.
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页码：753 / 756
页数：4
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