MODELING OF THE SILICON FLOATING GATE JUNCTION FIELD-EFFECT TRANSISTOR

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作者：
MATSON, EA
SECH, OV
机构：
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RADIOTEKHNIKA I ELEKTRONIKA | 1990年 / 35卷 / 05期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：1107 / 1109
页数：3
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