Advantages of a buried-gate structure for graphene field-effect transistor

被引：12

作者：

Lee, Sang Kyung ^{[1
]}

Kim, Yun Ji ^{[2
]}

Heo, Sunwoo ^{[1
,2
]}

Park, Woojin ^{[3
]}

Yoo, Tae Jin ^{[1
,2
]}

Cho, Chunhum ^{[2
]}

Hwang, Hyeon Jun ^{[1
,2
]}

Lee, Byoung Hun ^{[1
,2
]}

机构：

[1] GIST, Ctr Emerging Elect Devices & Syst, Gwangju 61005, South Korea

[2] GIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea

[3] KAUST, Mmh Labs Elect Engn, Comp Elect Math Sci & Engn Div, Thuwal 239556900, Saudi Arabia

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2019年 / 34卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

graphene; field effect transistor; buried gate; top gate; structure; series resistance; ATOMIC LAYER DEPOSITION; HIGH-QUALITY; DIELECTRICS; BARRISTOR; BANDGAP;

D O I：

10.1088/1361-6641/ab0d54

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Graphene field effect transistors (GFETs) with top-gate and back-gate structures have been extensively used without much consideration for compatibility with graphene. A comparative study of the electrical characteristics of buried-gate GFETs and top-gate GFETs revealed that the performance of buried-gate GFETs is drastically enhanced by having a better gate controllability, achieving three times higher field effect mobility (similar to 3000 cm(2 )V(-1) s(-1)) than top-gate GFETs with on/off ratio similar to 10. Carrier scattering was also substantially improved by minimizing the fringing field effect, which is found to be the origin of high series resistance in top-gate GFETs. Moreover, we showed by electromagnetic (EM) simulation that the electric field distribution inside the transistors is more uniform at the buried-gate GFETs than the top-gate GFETs.

引用

页数：9

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