Facile synthesis and photoluminescence of ZnSe nanowires

被引：17

作者：

Du, Yinxiao ^{[1
]}

Yuan, Qing-Xin ^{[1
]}

机构：

[1] Zhengzhou Inst Aeronaut Ind Management, Dept Math & Phys, Zhengzhou 450015, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 492卷 / 1-2期

关键词：

Nanostructured materials; Semiconductors; Optical property; GROWTH; NANORIBBONS;

D O I：

10.1016/j.jallcom.2009.11.170

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Well-defined ZnSe nanowires were successfully synthesized on the composite layer of gold and carbon coated Si substrates by using a facile thermal vaporation method. These nanowires are of well crystalline cubic structure and the average length is up to tens of micrometers. It is found that the growth process follows a typical vapor-liquid-solid (VLS) mechanism, and the carbon layer can enhance the VLS growth process of the ZnSe nanowires. Moreover, the photoluminescence (PL) properties of the nanowires were investigated. Only a broad and strong red emission band centered at 629 nm is observed. The main reason is ascribed to the donor-acceptor pair recombination induced by a large amount of Zn vacancies and Zn interstitials existing in ZnSe nanowires. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：548 / 551

页数：4

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