Facile synthesis and photoluminescence of ZnSe nanowires

被引:17
|
作者
Du, Yinxiao [1 ]
Yuan, Qing-Xin [1 ]
机构
[1] Zhengzhou Inst Aeronaut Ind Management, Dept Math & Phys, Zhengzhou 450015, Peoples R China
关键词
Nanostructured materials; Semiconductors; Optical property; GROWTH; NANORIBBONS;
D O I
10.1016/j.jallcom.2009.11.170
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Well-defined ZnSe nanowires were successfully synthesized on the composite layer of gold and carbon coated Si substrates by using a facile thermal vaporation method. These nanowires are of well crystalline cubic structure and the average length is up to tens of micrometers. It is found that the growth process follows a typical vapor-liquid-solid (VLS) mechanism, and the carbon layer can enhance the VLS growth process of the ZnSe nanowires. Moreover, the photoluminescence (PL) properties of the nanowires were investigated. Only a broad and strong red emission band centered at 629 nm is observed. The main reason is ascribed to the donor-acceptor pair recombination induced by a large amount of Zn vacancies and Zn interstitials existing in ZnSe nanowires. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:548 / 551
页数:4
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