Electronic characteristics of the interfacial states embedded in "buffer-free" GaSb/GaAs (001) heterojunctions

被引：8
|
作者：
Jallipalli, A. [1 ]
Nunna, K. [2 ]
Kutty, M. N. [3 ]
Balakrishnan, G. [3 ]
Dawson, L. R. [3 ]
Huffaker, D. L. [1 ,2 ]
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[2] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA
[3] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 20期
关键词：
annealing; gallium compounds; III-V semiconductors; interface states; p-i-n diodes; semiconductor doping; semiconductor heterojunctions; solar cells; tunnelling;
D O I：
10.1063/1.3266835
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a comprehensive study of the electronic properties and compensation of the interfacial states embedded in a majority carrier electron region either on one or both sides of the "buffer-free" GaSb/GaAs (001) heterointerface. An abrupt change observed in the forward-bias current (58 mA) for a small variation in the applied bias (0.05 V) is ascribed to the compensation of the interfacial states due to electron tunneling from GaAs into GaSb. As a result, after the first sweep, the compensated interfacial states exhibit low turn-on voltage (0.35 V) and low reverse-bias currents (30 mu A at -5 V). Similar compensation is also obtained via delta-doping or annealing the diodes. The diodes analyzed in this study are useful as the heterointerface is embedded in the majority electron region resembles with that of the n-cladding region of p-i-n structures such as lasers, detectors, and solar cells.
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页数：3
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