Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

被引：58

作者：

Sun, Huarui ^{[1
]}

Pomeroy, James W. ^{[1
]}

Simon, Roland B. ^{[1
]}

Francis, Daniel ^{[2
]}

Faili, Firooz ^{[2
]}

Twitchen, Daniel J. ^{[2
]}

Kuball, Martin ^{[1
]}

机构：

[1] Univ Bristol, Ctr Device Thermog & Reliabil, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] Element Six Technol, Santa Clara, CA 95054 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

GaN-on-diamond; HEMT; reliability; thermal resistance; temperature dependence; BOUNDARY RESISTANCE; ALGAN/GAN HEMTS; CONDUCTIVITY; FILMS; GRAIN;

D O I：

10.1109/LED.2016.2537835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermal properties of GaN-on-diamond high-electron mobility transistor (HEMT) wafers from 25 degrees C to 250 degrees C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due to the increasing thermal conductivity of the amorphous SiNx interlayer, therefore potentially counteracting thermal runaway of devices. The results demonstrate the thermal benefit of GaN-on-diamond for HEMT high-power operations, and provide valuable information for assessing the thermal resistance and reliability of devices.

引用

页码：621 / 624

页数：4

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