A novel strategy for GaN-on-diamond device with a high thermal boundary conductance

被引：0

作者：

Mu, Fengwen ^{[1
]}

Xu, Bin ^{[2
]}

Wang, Xinhua ^{[1
,3
,4
]}

Gao, Runhua ^{[1
]}

Huang, Sen ^{[1
,3
,4
]}

Wei, Ke ^{[1
]}

Takeuchi, Kai ^{[5
]}

Chen, Xiaojuan ^{[1
]}

Yin, Haibo ^{[1
]}

Wang, Dahai ^{[1
]}

Yu, Jiahan ^{[6
]}

Suga, Tadatomo ^{[5
]}

Shiomi, Junichiro ^{[2
]}

Liu, Xinyu ^{[1
,3
,4
]}

机构：

[1] High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing,100029, China

[2] Department of Mechanical Engineering, The University of Tokyo, Bunkyo, Tokyo,113–8656, Japan

[3] University of Chinese Academy of Sciences, Beijing,100049, China

[4] Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing,100029, China

[5] Collaborative Research Center, Meisei University, Hino-shi, Tokyo,191–8506, Japan

[6] Integrated Circuit Advanced Process R&D Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing,100029, China

来源：

Journal of Alloys and Compounds | 2022年 / 905卷

关键词：

All Open Access; Green;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[1] A novel strategy for GaN-on-diamond device with a high thermal boundary conductance
Mu, Fengwen
Xu, Bin
Wang, Xinhua
Gao, Runhua
Huang, Sen
Wei, Ke
Takeuchi, Kai
Chen, Xiaojuan
Yin, Haibo
Wang, Dahai
Yu, Jiahan
Suga, Tadatomo
Shiomi, Junichiro
Liu, Xinyu
[J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2022, 905
[2] Impact of thermal boundary resistance on the thermal design of GaN-on-Diamond HEMTs
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