Quantum simulation of nano-scale Schottky barrier MOSFETs

被引：0
|
作者：
Shin, M [1 ]
Jang, M [1 ]
Lee, S [1 ]
机构：
[1] Informat & Commun Univ, Sch Engn, Taejon 305714, South Korea
来源：
2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGY | 2004年
关键词：
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：396 / 398
页数：3
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