The stability of 6H-SiC MOS capacitors at high temperature

被引：0
|
作者：
Yamada, N
Fuma, H
Tadano, H
机构：
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We evaluated the stability of 6H silicon carbide (SiC) MOS capacitor biased at high temperatures, using the quasi-static capacitance-voltage (C-V) measurement The capacitance of the MOS capacitor (with 25 nm oxide film) considerably increased in depletion region, when a bias voltage of -9 V at 300 degrees C for 1 minute was applied. The MOS capacitor that treated with biasing the voltage of +5 V or -5 V for 15 minutes at 200 degrees C showed the stable quasi-static C-V characteristics. These results suggest that the characteristics of SiC MOS devices are affected by their operating temperature and biasing ranges.
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页码：737 / 740
页数：4
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