Study of high temperature photocurrent properties of 6H-SiC UV sensor

被引：4

作者：

Ueda, Yasuhiro ^{[1
]}

Akita, Seiji ^{[2
]}

Nomura, Yasuhiko ^{[1
]}

Nakayama, Yoshikazu ^{[3
]}

Naito, Hiroyoshi ^{[2
]}

机构：

[1] Sanyo Elect Co Ltd, R&D Head Quarter, Osaka 5738534, Japan

[2] Osaka Prefecture Univ, Dept Phys & Elect, Osaka 5998531, Japan

[3] Osaka Univ, Dept Mech Engn, Suita, Osaka 5650871, Japan

来源：

THIN SOLID FILMS | 2008年 / 517卷 / 04期

关键词：

Optoelectronic devices; Silicon carbide; UV Sensor; High temperature; 6H-SiC;

D O I：

10.1016/j.tsf.2008.09.049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The characteristics of a 6H-SiC UV SENSOR with n(+)-p junction fabricated by N+-implantation. were investigated at high temperatures of up to 500 degrees C. Photocurrent was measured as a function of the incident light wavelength and the temperature of the sensor. The photocurrent was increasing with temperature elevation to be two to three times its room temperature value at 500 degrees C. The temperature coefficient of photocurrent was estimated to be about 0.5%/degrees C in the range of 100-500 degrees C at 250-300 nm. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：1471 / 1473

页数：3

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