user

The stability of 6H-SiC MOS capacitors at high temperature

被引：0
|
作者：
Yamada, N
Fuma, H
Tadano, H
机构：
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We evaluated the stability of 6H silicon carbide (SiC) MOS capacitor biased at high temperatures, using the quasi-static capacitance-voltage (C-V) measurement The capacitance of the MOS capacitor (with 25 nm oxide film) considerably increased in depletion region, when a bias voltage of -9 V at 300 degrees C for 1 minute was applied. The MOS capacitor that treated with biasing the voltage of +5 V or -5 V for 15 minutes at 200 degrees C showed the stable quasi-static C-V characteristics. These results suggest that the characteristics of SiC MOS devices are affected by their operating temperature and biasing ranges.
引用
收藏
页码：737 / 740
页数：4
相关论文
共 50 条
  • [1] Degradation of 6H-SiC MOS capacitors operated at high temperatures
    Bassler, M
    Afanas'ev, VV
    Pensl, G
    Schulz, M
    [J]. MICROELECTRONIC ENGINEERING, 1999, 48 (1-4) : 257 - 260
  • [2] High temperature property studies of the 6H-SiC MOS capacitor
    Mu WeiBing
    Gong Min
    Cao Qun
    [J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2011, 54 (01) : 95 - 97
  • [3] High temperature property studies of the 6H-SiC MOS capacitor
    WeiBing Mu
    Min Gong
    Qun Cao
    [J]. Science China Physics, Mechanics and Astronomy, 2011, 54 : 95 - 97
  • [4] High temperature property studies of the 6H-SiC MOS capacitor
    MU WeiBing 1
    2 Institute of Electricity Engineering
    3 Key Laboratory of Radiation Physics and Technology (Sichuan University)
    [J]. Science China(Physics,Mechanics & Astronomy), 2011, (01) : 95 - 97
  • [5] Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence
    Iwamoto, N.
    Onoda, S.
    Ohshima, T.
    Kojima, K.
    Kawano, K.
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 517 - 520
  • [6] 6H-SiC MOS capacitors on sloped surfaces: Realisation, characterisation and electrical results
    Lanois, F
    Planson, D
    Lassagne, P
    Raynaud, C
    Bano, E
    [J]. SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1029 - 1032
  • [7] INSTABILITIES IN 6H-SIC MOS STRUCTURES
    RAYNAUD, C
    AUTRQAN, JL
    SEIGNEUR, F
    JAUSSAUD, C
    BILLON, T
    GUILLOT, G
    BALLAND, B
    [J]. JOURNAL DE PHYSIQUE III, 1994, 4 (05): : 937 - 952
  • [8] HIGH-TEMPERATURE 6H-SIC DINISTOR
    ANDREEV, AN
    STRELCHUK, AM
    SAVKINA, NS
    SNEGOV, FM
    CHELNOKOV, VE
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 194 - 197
  • [9] MOS Capacitors Fabricated on 3C-SiC(111) Layers Grown on 6H-SiC(0001)
    Lorenzzi, Jean
    Esteve, Romain
    Jegenyes, Nikoletta
    Reshanov, Sergey A.
    Schoner, Adolf
    Ferro, Gabriel
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (06) : H630 - H634
  • [10] Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC
    Winters, M.
    Sveinbjornsson, E. O.
    Melios, C.
    Kazakova, O.
    Strupinski, W.
    Rorsman, N.
    [J]. AIP ADVANCES, 2016, 6 (08):
12345