High temperature property studies of the 6H-SiC MOS capacitor

被引:0
|
作者
MU WeiBing 1
2 Institute of Electricity Engineering
3 Key Laboratory of Radiation Physics and Technology (Sichuan University)
机构
关键词
high temperature; 6H-SiC; MOS capacitor; flat-band voltage;
D O I
暂无
中图分类号
O472.4 [];
学科分类号
070205 ; 080501 ; 0809 ; 080903 ;
摘要
N-type and p-type 6H-SiC metal oxide semiconductor (MOS) capacitor samples are fabricated with a typical method,and the high frequency capacitor voltage (C-V) curves of these samples are measured at temperatures ranging from 293 to 533 K.There exists huge difference between the n-type and p-type samples.Flat-band voltage shift of the n-type sample becomes larger with temperature rising,but that of the p-type sample have very little change.This may be caused by the residual Al in the p-type oxide.Both types of the SiC samples follow the same rule of flat-band voltage changing with temperature.But their mechanisms are different as temperature is above 453 K.Of both types the p-type SiC is more suitable for high temperature applications.
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页码:95 / 97
页数:3
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