High temperature property studies of the 6H-SiC MOS capacitor

N-type and p-type 6H-SiC metal oxide semiconductor (MOS) capacitor samples are fabricated with a typical method,and the high frequency capacitor voltage (C-V) curves of these samples are measured at temperatures ranging from 293 to 533 K.There exists huge difference between the n-type and p-type samples.Flat-band voltage shift of the n-type sample becomes larger with temperature rising,but that of the p-type sample have very little change.This may be caused by the residual Al in the p-type oxide.Both types of the SiC samples follow the same rule of flat-band voltage changing with temperature.But their mechanisms are different as temperature is above 453 K.Of both types the p-type SiC is more suitable for high temperature applications.