Evolution of ferromagnetism with sputtering gas in Mn:ZnO films

被引：5
|
作者：
Cespedes, E. [1 ]
Sanchez-Marcos, J. [1 ]
Garcia-Lopez, J. [2 ]
Prieto, Carlos [1 ]
机构：
[1] CSIC, Inst Ciencia Mat Madrid, Madrid 28049, Spain
[2] Ctr Nacl Aceleradores, Seville 41092, Spain
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2010年 / 322卷 / 9-12期
关键词：
Diluted magnetic semiconductor; Mn:Zno;
D O I：
10.1016/j.jmmm.2009.05.038
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of introducing nitrogen and oxygen in the sputtering working gas on the magnetic properties of Mn:ZnO thin films has been investigated. A set of films has been characterized by X-ray diffraction, X-ray absorption near edge structure (XANES) and optical absorption spectroscopy to correlate its magnetic properties with Mn electronic characteristics. Mn2+ substituting Zn2(+) in the wurtzite structure has been obtained for the films presenting considerably high saturation magnetization values. The change in the magnetic behaviour seems to be associated with the electronic carrier density in the films. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1201 / 1204
页数：4
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